*化铟 InAs wafer Typical Electrical Properties Dopant *ailable S Zn Undoped Type of conductivity N P P Conce*ation ( cm -3 ) 1E17 - 3E18 1E17 - 5E18 x Hall Mobility ( cm2 / v.s. ) 10000 - 25000 100 - 500 > 20000 Standard Specification Growth method LEC Diameter ( mm ) 50.8 Thickness ( um ) 500 +/-25 um Conductivity Semi-conducting Orientation <100> , <111> , <110> Off orientation From 2° to 10° off Flat options EJ or US SEMI. Std . Surface finish One side or two sides polished EPD ( cm-2) < 15000 or < 50000 Grade Epi polished grade , mechanical grade Package method Single wafer container with outer foil bag 标签： 哈尔滨市化铟 哈尔滨市化铟厂家 黑龙江 哈尔滨市哈尔滨市化铟厂家 供应砷化铟InAwafer
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