锑化镓GaSb wafer 单晶 掺杂 导电 类型 载流子浓度cm-3 位错密 度cm-2 生长方法 *尺寸 标准 基片 GaSb None None high R Zn Te Te high R P P- P+ N N 1~2×1017 1~5×1016 1~5×1018 2~6×1017 1~5×1016 ＜103 LEC Φ3″ Φ3″×0.5 Φ2″×0.5 Typical Electrical Properties Dopant *ailable Te Zn Undoped Type of conductivity N P P Conce*ation ( cm -3 ) 1E17 - 5E18 2E17 - 4E18 x Hall Mobility ( cm 2 / v.s. ) 2500 - 3500 200 - 500 600 - 700 Standard Specifications Growth method LEC Diameter ( mm ) 50.8 Thickness ( um ) 500 +/-25 um Conductivity Semi-conducting Orientation <100> , <111> , <110> Off orientation From 2° to 10° off Flat options EJ or US SEMI. Std . Surface finish One side or two sides polished EPD ( cm-2) < 1000 or < 10000 Grade Epi polished grade , mechanical grade Package method Single wafer container with outer foil bag 标签： 哈尔滨市锑化镓 哈尔滨市锑化镓厂家 黑龙江 哈尔滨市哈尔滨市锑化镓厂家 供应锑化镓GaSbwafer
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